<h3>半導體產(chǎn)業(yè)作為一個起源于國外的技術，很多相關的技術術語都是用英文表述。且由于很多從業(yè)者都有海外經(jīng)歷，或者他們習慣于用英文表述相關的工藝和技術節(jié)點，那就導致很多的英文術語被翻譯為中文之后，很多人不能對照得上，或者不知道怎么翻譯。</h3><h3><br></h3><h3>在這里我們整理一些常用的半導體術語的中英文版本，希望對大家有所幫助。如果當中有出錯，請幫忙糾正，謝謝！</h3><h3><br></h3><h3>常用半導體中英對照表</h3><h3><br></h3><h3>離子注入機 ion implanter</h3><h3><br></h3><h3>LSS理論 Lindhand Scharff and Schiott theory，又稱"林漢德-斯卡夫-斯高特理論"。</h3><h3><br></h3><h3>溝道效應 channeling effect</h3><h3><br></h3><h3>射程分布 range distribution</h3><h3><br></h3><h3>深度分布 depth distribution</h3><h3><br></h3><h3>投影射程 projected range</h3><h3><br></h3><h3>阻止距離 stopping distance</h3><h3><br></h3><h3>阻止本領 stopping power</h3><h3><br></h3><h3>標準阻止截面 standard stopping cross section</h3><h3><br></h3><h3>退火 annealing</h3><h3><br></h3><h3>激活能 activation energy</h3><h3><br></h3><h3>等溫退火 isothermal annealing</h3><h3><br></h3><h3>激光退火 laser annealing</h3><h3><br></h3><h3>應力感生缺陷 stress-induced defect</h3><h3><br></h3><h3>擇優(yōu)取向 preferred orientation</h3><h3><br></h3><h3>制版工藝 mask-making technology</h3><h3><br></h3><h3>圖形畸變 pattern distortion</h3><h3><br></h3><h3>初縮 first minification</h3><h3><br></h3><h3>精縮 final minification</h3><h3><br></h3><h3>母版 master mask</h3><h3><br></h3><h3>鉻版 chromium plate</h3><h3><br></h3><h3>干版 dry plate</h3><h3><br></h3><h3>乳膠版 emulsion plate</h3><h3><br></h3><h3>透明版 see-through plate</h3><h3><br></h3><h3>高分辨率版 high resolution plate, HRP</h3><h3><br></h3><h3>超微粒干版 plate for ultra-microminiaturization</h3><h3><br></h3><h3>掩模 mask</h3><h3><br></h3><h3>掩模對準 mask alignment</h3><h3><br></h3><h3>對準精度 alignment precision</h3><h3><br></h3><h3>光刻膠 photoresist，又稱"光致抗蝕劑"。</h3><h3><br></h3><h3>負性光刻膠 negative photoresist</h3><h3><br></h3><h3>正性光刻膠 positive photoresist</h3><h3><br></h3><h3>無機光刻膠 inorganic resist</h3><h3><br></h3><h3>多層光刻膠 multilevel resist</h3><h3><br></h3><h3>電子束光刻膠 electron beam resist</h3><h3><br></h3><h3>X射線光刻膠 X-ray resist</h3><h3><br></h3><h3>刷洗 scrubbing</h3><h3><br></h3><h3>甩膠 spinning</h3><h3><br></h3><h3>涂膠 photoresist coating</h3><h3><br></h3><h3>后烘 postbaking</h3><h3><br></h3><h3>光刻 photolithography</h3><h3><br></h3><h3>X射線光刻 X-ray lithography</h3><h3><br></h3><h3>電子束光刻 electron beam lithography</h3><h3><br></h3><h3>離子束光刻 ion beam lithography</h3><h3><br></h3><h3>深紫外光刻 deep-UV lithography</h3><h3><br></h3><h3>光刻機 mask aligner</h3><h3><br></h3><h3>投影光刻機 projection mask aligner</h3><h3><br></h3><h3>曝光 exposure</h3><h3><br></h3><h3>接觸式曝光法 contact exposure method</h3><h3><br></h3><h3>接近式曝光法 proximity exposure method</h3><h3><br></h3><h3>光學投影曝光法 optical projection exposure method</h3><h3><br></h3><h3>電子束曝光系統(tǒng) electron beam exposure system</h3><h3><br></h3><h3>分步重復系統(tǒng) step-and-repeat system</h3><h3><br></h3><h3>顯影 development</h3><h3><br></h3><h3>線寬 linewidth</h3><h3><br></h3><h3>去膠 stripping of photoresist</h3><h3><br></h3><h3>氧化去膠 removing of photoresist by oxidation</h3><h3><br></h3><h3>等離子［體］去膠 removing of photoresist by plasma</h3><h3><br></h3><h3>刻蝕 etching</h3><h3><br></h3><h3>干法刻蝕 dry etching</h3><h3><br></h3><h3>反應離子刻蝕 reactive ion etching, RIE</h3><h3><br></h3><h3>各向同性刻蝕 isotropic etching</h3><h3><br></h3><h3>各向異性刻蝕 anisotropic etching</h3><h3><br></h3><h3>反應濺射刻蝕 reactive sputter etching</h3><h3><br></h3><h3>離子銑 ion beam milling，又稱"離子磨削"。</h3><h3><br></h3><h3>等離子［體］刻蝕 plasma etching</h3><h3><br></h3><h3>鉆蝕 undercutting</h3><h3><br></h3><h3>剝離技術 lift-off technology，又稱"浮脫工藝"。</h3><h3><br></h3><h3>終點監(jiān)測 endpoint monitoring</h3><h3><br></h3><h3>金屬化 metallization</h3><h3><br></h3><h3>互連 interconnection</h3><h3><br></h3><h3>多層金屬化 multilevel metallization</h3><h3><br></h3><h3>電遷徙 electromigration</h3><h3><br></h3><h3>回流 reflow</h3><h3><br></h3><h3>磷硅玻璃 phosphorosilicate glass</h3><h3><br></h3><h3>硼磷硅玻璃 boron-phosphorosilicate glass</h3><h3><br></h3><h3>鈍化工藝 passivation technology</h3><h3><br></h3><h3>多層介質鈍化 multilayer dielectric passivation</h3><h3><br></h3><h3>劃片 scribing</h3><h3><br></h3><h3>電子束切片 electron beam slicing</h3><h3><br></h3><h3>燒結 sintering</h3><h3><br></h3><h3>印壓 indentation</h3><h3><br></h3><h3>熱壓焊 thermocompression bonding</h3><h3><br></h3><h3>熱超聲焊 thermosonic bonding</h3><h3><br></h3><h3>冷焊 cold welding</h3><h3><br></h3><h3>點焊 spot welding</h3><h3><br></h3><h3>球焊 ball bonding</h3><h3><br></h3><h3>楔焊 wedge bonding</h3><h3><br></h3><h3>內引線焊接 inner lead bonding</h3><h3><br></h3><h3>外引線焊接 outer lead bonding</h3><h3><br></h3><h3>梁式引線 beam lead</h3><h3><br></h3><h3>裝架工藝 mounting technology</h3><h3><br></h3><h3>附著 adhesion</h3><h3><br></h3><h3>封裝 packaging</h3><h3><br></h3><h3>金屬封裝 metallic packaging</h3><h3><br></h3><h3>陶瓷封裝 ceramic packaging</h3><h3><br></h3><h3>扁平封裝 flat packaging</h3><h3><br></h3><h3>塑封 plastic package</h3><h3><br></h3><h3>玻璃封裝 glass packaging</h3><h3><br></h3><h3>微封裝 micropackaging，又稱"微組裝"。</h3><h3><br></h3><h3>管殼 package</h3><h3><br></h3><h3>管芯 die</h3><h3><br></h3><h3>引線鍵合 lead bonding</h3><h3><br></h3><h3>引線框式鍵合 lead frame bonding</h3><h3><br></h3><h3>帶式自動鍵合 tape automated bonding, TAB</h3><h3><br></h3><h3>激光鍵合 laser bonding</h3><h3><br></h3><h3>超聲鍵合 ultrasonic bonding</h3><h3><br></h3><h3>紅外鍵合 infrared bonding</h3><h3><br></h3> <h3><br></h3><h3>微電子辭典大集合</h3><h3>（按首字母順序排序）</h3><h3><br></h3><h3>A</h3><h3><br></h3><h3>Abrupt junction 突變結</h3><h3>Accelerated testing 加速實驗 </h3><h3>Acceptor 受主 </h3><h3>Acceptor atom 受主原子 </h3><h3>Accumulation 積累、堆積 </h3><h3>Accumulating contact 積累接觸 </h3><h3>Accumulation region 積累區(qū) </h3><h3>Accumulation layer 積累層 </h3><h3>Active region 有源區(qū) </h3><h3>Active component 有源元 </h3><h3>Active device 有源器件 </h3><h3>Activation 激活 </h3><h3>Activation energy 激活能 </h3><h3>Active region 有源（放大）區(qū) </h3><h3>Admittance 導納 </h3><h3>Allowed band 允帶 </h3><h3>Alloy-junction device</h3><h3>合金結器件 Aluminum(Aluminium) 鋁 </h3><h3>Aluminum oxide 鋁氧化物 </h3><h3>Aluminum passivation 鋁鈍化 </h3><h3>Ambipolar 雙極的</h3><h3>Ambient temperature 環(huán)境溫度 </h3><h3>Amorphous 無定形的，非晶體的 </h3><h3>Amplifier 功放 擴音器 放大器 </h3><h3>Analogue(Analog) comparator 模擬比較器 Angstrom 埃 </h3><h3>Anneal 退火 </h3><h3>Anisotropic 各向異性的 </h3><h3>Anode 陽極 </h3><h3>Arsenic (AS) 砷 </h3><h3>Auger 俄歇 </h3><h3>Auger process 俄歇過程 </h3><h3>Avalanche 雪崩 </h3><h3>Avalanche breakdown 雪崩擊穿 </h3><h3>Avalanche excitation雪崩激發(fā) </h3><h3><br></h3><h3>B</h3><h3><br></h3><h3>Background carrier 本底載流子 </h3><h3>Background doping 本底摻雜 </h3><h3>Backward 反向 </h3><h3>Backward bias 反向偏置 </h3><h3>Ballasting resistor 整流電阻 </h3><h3>Ball bond 球形鍵合 </h3><h3>Band 能帶 </h3><h3>Band gap 能帶間隙 </h3><h3>Barrier 勢壘 </h3><h3>Barrier layer 勢壘層 </h3><h3>Barrier width 勢壘寬度 </h3><h3>Base 基極 </h3><h3>Base contact 基區(qū)接觸 </h3><h3>Base stretching 基區(qū)擴展效應 </h3><h3>Base transit time 基區(qū)渡越時間 </h3><h3>Base transport efficiency基區(qū)輸運系數(shù) </h3><h3>Base-width modulation基區(qū)寬度調制 </h3><h3>Basis vector 基矢 </h3><h3>Bias 偏置 </h3><h3>Bilateral switch 雙向開關 </h3><h3>Binary code 二進制代碼</h3><h3>Binary compound semiconductor 二元化合物半導體 </h3><h3>Bipolar 雙極性的 </h3><h3>Bipolar Junction Transistor (BJT)雙極晶體管 </h3><h3>Bloch 布洛赫 </h3><h3>Blocking band 阻擋能帶 </h3><h3>Blocking contact 阻擋接觸 </h3><h3>Body - centered 體心立方 </h3><h3>Body-centred cubic structure 體立心結構 </h3><h3>Boltzmann 波爾茲曼 </h3><h3>Bond 鍵、鍵合 </h3><h3>Bonding electron 價電子 </h3><h3>Bonding pad 鍵合點 </h3><h3>Bootstrap circuit 自舉電路 </h3><h3>Bootstrapped emitter follower 自舉射極跟隨器</h3><h3>Boron 硼 </h3><h3>Borosilicate glass 硼硅玻璃 </h3><h3>Boundary condition 邊界條件 </h3><h3>Bound electron 束縛電子 </h3><h3>Breadboard 模擬板、實驗板 </h3><h3>Break down 擊穿 </h3><h3>Break over 轉折 </h3><h3>Brillouin 布里淵 </h3><h3>Brillouin zone 布里淵區(qū) </h3><h3>Built-in 內建的 </h3><h3>Build-in electric field 內建電場 </h3><h3>Bulk 體/體內 Bulk absorption 體吸收 </h3><h3>Bulk generation 體產(chǎn)生 </h3><h3>Bulk recombination 體復合 </h3><h3>Burn - in 老化 </h3><h3>Burn out 燒毀 </h3><h3>Buried channel 埋溝 </h3><h3>Buried diffusion region 隱埋擴散區(qū) </h3><h3><br></h3><h3>C</h3><h3><br></h3><h3>Can 外殼 </h3><h3>Capacitance 電容 </h3><h3>Capture cross section 俘獲截面 </h3><h3>Capture carrier 俘獲載流子 </h3><h3>Carrier 載流子、載波</h3><h3>Carry bit 進位位 </h3><h3>Carry-in bit 進位輸入 </h3><h3>Carry-out bit 進位輸出 </h3><h3>Cascade 級聯(lián) </h3><h3>Case 管殼 </h3><h3>Cathode 陰極</h3><h3>Center 中心 </h3><h3>Ceramic 陶瓷（的） </h3><h3>Channel 溝道 </h3><h3>Channel breakdown 溝道擊穿</h3><h3>Channel current 溝道電流 </h3><h3>Channel doping 溝道摻雜 </h3><h3>Channel shortening 溝道縮短 </h3><h3>Channel width 溝道寬度 </h3><h3>Characteristic impedance 特征阻抗 </h3><h3>Charge 電荷、充電 </h3><h3>Charge-compensation effects 電荷補償效應 </h3><h3>Charge conservation 電荷守恒 </h3><h3>Charge neutrality condition 電中性條件 </h3><h3>Charge drive/exchange/sharing/transfer/storage 電荷驅動/交換/共享/轉移/存儲 </h3><h3>Chemmical etching 化學腐蝕法 </h3><h3>Chemically-Polish 化學拋光 </h3><h3>Chemmically-Mechanically Polish (CMP) 化學機械拋光 Chip 芯片 </h3><h3>Chip yield 芯片成品率 </h3><h3>Clamped 箝位 </h3><h3>Clamping diode 箝位二極管 </h3><h3>Cleavage plane 解理面 </h3><h3>Clock rate 時鐘頻率 </h3><h3>Clock generator 時鐘發(fā)生器 </h3><h3>Clock flip-flop 時鐘觸發(fā)器 </h3><h3>Close-packed structure 密堆積結構 </h3><h3>Close-loop gain 閉環(huán)增益</h3><h3>Collector 集電極 </h3><h3>Collision 碰撞 </h3><h3>Compensated OP-AMP 補償運放 </h3><h3>Common-base/collector/emitter connection 共基極/集電極/發(fā)射極連接 </h3><h3>Common-gate/drain/source connection 共柵/漏/源連接 </h3><h3>Common-mode gain 共模增益 </h3><h3>Common-mode 共模輸入 </h3><h3>Common-mode rejection ratio (CMRR) 共模抑制比 </h3><h3>Compatibility 兼容性 </h3><h3>Compensation 補償 </h3><h3>Compensated impurities 補償雜質 </h3><h3>Compensated semiconductor 補償半導體 </h3><h3>Complementary Darlington circuit 互補達林頓電路 </h3><h3>Complementary Metal-Oxide-Semiconductor Field-Effect-Transistor(CMOS) </h3><h3>互補金屬氧化物半導體場效應晶體管 </h3><h3>Complementary error function 余誤差函數(shù) </h3><h3>Computer-aided design (CAD)/test(CAT)/manufacture(CAM) 計算機輔助設計/ 測試 /制 </h3><h3>造 </h3><h3>Compound Semiconductor 化合物半導體 </h3><h3>Conductance 電導 </h3><h3>Conduction band (edge) 導帶(底) </h3><h3>Conduction level/state 導帶態(tài) </h3><h3>Conductor 導體</h3><h3>Conductivity 電導率 </h3><h3>Configuration 組態(tài)</h3><h3>Conlomb 庫侖 </h3><h3>Conpled Configuration Devices 結構組態(tài) </h3><h3>Constants 物理常數(shù) </h3><h3>Constant energy surface 等能面 </h3><h3>Constant-source diffusion恒定源擴散 </h3><h3>Contact 接觸 </h3><h3>Contamination 治污 </h3><h3>Continuity equation 連續(xù)性方程</h3><h3>Contact hole 接觸孔 </h3><h3>Contact potential 接觸電勢 </h3><h3>Continuity condition 連續(xù)性條件 </h3><h3>Contra doping 反摻雜 </h3><h3>Controlled 受控的 </h3><h3>Converter 轉換器 </h3><h3>Conveyer 傳輸器 </h3><h3>Copper interconnection system 銅互連系統(tǒng)</h3><h3>Couping 耦合 </h3><h3>Covalent 共階的 </h3><h3>Crossover 跨交 </h3><h3>Critical 臨界的 </h3><h3>Crossunder 穿交 </h3><h3>Crucible坩堝 </h3><h3>Crystal defect/face/orientation/lattice 晶體缺陷/晶面/晶向/晶 </h3><h3>格 </h3><h3>Current density 電流密度</h3><h3>Curvature 曲率 </h3><h3>Cut off 截止 </h3><h3>Current drift/dirve/sharing 電流漂移/驅動/共享 </h3><h3>Current Sense 電流取樣 </h3><h3>Curvature 彎曲 </h3><h3>Custom integrated circuit 定制集成電路 </h3><h3>Cylindrical 柱面的 </h3><h3>Czochralshicrystal 直立單晶 </h3><h3>Czochralski technique 切克勞斯基技術（Cz法直拉晶體J） </h3><h3><br></h3> <h3>D</h3><h3><br></h3><h3>Dangling bonds 懸掛鍵 </h3><h3>Dark current 暗電流 </h3><h3>Dead time 空載時間 </h3><h3>Debye length 德拜長度 </h3><h3>De.broglie 德布洛意 </h3><h3>Decderate 減速 </h3><h3>Decibel (dB) 分貝 </h3><h3>Decode 譯碼 </h3><h3>Deep acceptor level 深受主能級 </h3><h3>Deep donor level 深施主能級 </h3><h3>Deep impurity level 深度雜質能級 </h3><h3>Deep trap 深陷阱 </h3><h3>Defeat 缺陷 </h3><h3>Degenerate semiconductor 簡并半導體 </h3><h3>Degeneracy 簡并度 </h3><h3>Degradation 退化 </h3><h3>Degree Celsius(centigrade) /Kelvin 攝氏/開氏溫度 </h3><h3>Delay 延遲 Density 密度 </h3><h3>Density of states 態(tài)密度 </h3><h3>Depletion 耗盡 </h3><h3>Depletion approximation 耗盡近似 </h3><h3>Depletion contact 耗盡接觸 </h3><h3>Depletion depth 耗盡深度 </h3><h3>Depletion effect 耗盡效應 </h3><h3>Depletion layer 耗盡層 </h3><h3>Depletion MOS 耗盡MOS </h3><h3>Depletion region 耗盡區(qū) </h3><h3>Deposited film 淀積薄膜 </h3><h3>Deposition process 淀積工藝 </h3><h3>Design rules 設計規(guī)則 </h3><h3>Die 芯片（復數(shù)dice） </h3><h3>Diode 二極管 </h3><h3>Dielectric 介電的 </h3><h3>Dielectric isolation 介質隔離 </h3><h3>Difference-mode 差模輸入 </h3><h3>Differential amplifier 差分放大器 </h3><h3>Differential capacitance 微分電容 </h3><h3>Diffused junction 擴散結 </h3><h3>Diffusion 擴散 </h3><h3>Diffusion coefficient 擴散系數(shù) </h3><h3>Diffusion constant 擴散常數(shù)</h3><h3>Diffusivity 擴散率 </h3><h3>Diffusion capacitance/barrier/current/furnace 擴散電容/勢壘/電流/爐 </h3><h3>Digital circuit 數(shù)字電路 </h3><h3>Dipole domain 偶極疇 </h3><h3>Dipole layer 偶極層 </h3><h3>Direct-coupling 直接耦合 </h3><h3>Direct-gap semiconductor 直接帶隙半導體 </h3><h3>Direct transition 直接躍遷 </h3><h3>Discharge 放電 </h3><h3>Discrete component 分立元件 </h3><h3>Dissipation 耗散 </h3><h3>Distribution 分布 </h3><h3>Distributed capacitance 分布電容 </h3><h3>Distributed model 分布模型 </h3><h3>Displacement 位移 Dislocation 位錯 </h3><h3>Domain 疇 Donor 施主 </h3><h3>Donor exhaustion 施主耗盡 </h3><h3>Dopant 摻雜劑 </h3><h3>Doped semiconductor 摻雜半導體 </h3><h3>Doping concentration 摻雜濃度 </h3><h3>Double-diffusive MOS(DMOS)雙擴散MOS. </h3><h3>Drift 漂移 Drift field 漂移電場 </h3><h3>Drift mobility 遷移率 </h3><h3>Dry etching 干法腐蝕 </h3><h3>Dry/wet oxidation 干/濕法氧化</h3><h3>Dose 劑量 </h3><h3>Duty cycle 工作周期 </h3><h3>Dual-in-line package （DIP） 雙列直插式封裝 </h3><h3>Dynamics 動態(tài) </h3><h3>Dynamic characteristics 動態(tài)屬性 </h3><h3>Dynamic impedance 動態(tài)阻抗 </h3><h3><br></h3><h3>E</h3><h3><br></h3><h3>Early effect 厄利效應 </h3><h3>Early failure 早期失效 </h3><h3>Effective mass 有效質量 </h3><h3>Einstein relation(ship) 愛因斯坦關系 </h3><h3>Electric Erase Programmable Read Only Memory(E2PROM) 一次性電可擦除只讀存儲器 </h3><h3>Electrode 電極 </h3><h3>Electrominggratim 電遷移 </h3><h3>Electron affinity 電子親和勢 </h3><h3>Electronic -grade 電子能 </h3><h3>Electron-beam photo-resist exposure 光致抗蝕劑的電子束曝光 </h3><h3>Electron gas 電子氣 </h3><h3>Electron-grade water 電子級純水 </h3><h3>Electron trapping center 電子俘獲中心 </h3><h3>Electron Volt (eV) 電子伏 </h3><h3>Electrostatic 靜電的</h3><h3>Element 元素/元件/配件 </h3><h3>Elemental semiconductor 元素半導體</h3><h3>Ellipse 橢圓 </h3><h3>Ellipsoid 橢球 </h3><h3>Emitter 發(fā)射極 </h3><h3>Emitter-coupled logic 發(fā)射極耦合邏輯</h3><h3>Emitter-coupled pair 發(fā)射極耦合對 </h3><h3>Emitter follower 射隨器 </h3><h3>Empty band 空帶 </h3><h3>Emitter crowding effect 發(fā)射極集邊（擁擠）效應 </h3><h3>Endurance test =life test 壽命測試 </h3><h3>Energy state 能態(tài) </h3><h3>Energy momentum diagram 能量-動量(E-K)圖 </h3><h3>Enhancement mode 增強型模式 </h3><h3>Enhancement MOS 增強性</h3><h3>MOS Entefic (低)共溶的 </h3><h3>Environmental test 環(huán)境測試 </h3><h3>Epitaxial 外延的 </h3><h3>Epitaxial layer 外延層 </h3><h3>Epitaxial slice 外延片 </h3><h3>Expitaxy 外延 </h3><h3>Equivalent curcuit 等效電路 </h3><h3>Equilibrium majority /minority carriers 平衡多數(shù)/少數(shù)載流子 </h3><h3>Erasable Programmable ROM (EPROM)可搽?。ň幊蹋┐鎯ζ?</h3><h3>Error function complement 余誤差函數(shù) </h3><h3>Etch 刻蝕 </h3><h3>Etchant 刻蝕劑 </h3><h3>Etching mask 抗蝕劑掩模 </h3><h3>Excess carrier 過剩載流子 </h3><h3>Excitation energy 激發(fā)能 </h3><h3>Excited state 激發(fā)態(tài) </h3><h3>Exciton 激子 </h3><h3>Extrapolation 外推法 </h3><h3>Extrinsic 非本征的 </h3><h3>Extrinsic semiconductor 雜質半導體 </h3><h3><br></h3> <h3>F</h3><h3><br></h3><h3>Face - centered 面心立方 </h3><h3>Fall time 下降時間 </h3><h3>Fan-in 扇入 </h3><h3>Fan-out 扇出 </h3><h3>Fast recovery 快恢復 </h3><h3>Fast surface states 快界面態(tài) </h3><h3>Feedback 反饋 </h3><h3>Fermi level 費米能級 </h3><h3>Fermi-Dirac Distribution 費米-狄拉克分布 </h3><h3>Femi potential 費米勢 </h3><h3>Fick equation 菲克方程（擴散） </h3><h3>Field effect transistor 場效應晶體管 </h3><h3>Field oxide 場氧化層 </h3><h3>Filled band 滿帶 </h3><h3>Film 薄膜 </h3><h3>Flash memory 閃爍存儲器 </h3><h3>Flat band 平帶 </h3><h3>Flat pack 扁平封裝 </h3><h3>Flicker noise 閃爍（變）噪聲 </h3><h3>Flip-flop toggle 觸發(fā)器翻轉 </h3><h3>Floating gate 浮柵 </h3><h3>Fluoride etch 氟化氫刻蝕 </h3><h3>Forbidden band 禁帶 </h3><h3>Forward bias 正向偏置 </h3><h3>Forward blocking /conducting正向阻斷/導通 </h3><h3>Frequency deviation noise頻率漂移噪聲 </h3><h3>Frequency response 頻率響應 </h3><h3>Function 函數(shù) </h3><h3><br></h3><h3>G</h3><h3><br></h3><h3>Gain 增益 Gallium-Arsenide(GaAs) 砷化鉀 </h3><h3>Gamy ray r 射線 </h3><h3>Gate 門、柵、控制極 </h3><h3>Gate oxide 柵氧化層 </h3><h3>Gauss（ian） 高斯 </h3><h3>Gaussian distribution profile 高斯摻雜分布</h3><h3>Generation-recombination 產(chǎn)生-復合 </h3><h3>Geometries 幾何尺寸 </h3><h3>Germanium(Ge) 鍺 </h3><h3>Graded 緩變的 </h3><h3>Graded (gradual) channel 緩變溝道 </h3><h3>Graded junction 緩變結 </h3><h3>Grain 晶粒 </h3><h3>Gradient 梯度 </h3><h3>Grown junction 生長結 </h3><h3>Guard ring 保護環(huán) </h3><h3>Gummel-Poom model 葛謀-潘 模型 </h3><h3>Gunn - effect 狄氏效應 </h3><h3><br></h3><h3>H</h3><h3><br></h3><h3>Hardened device 輻射加固器件 </h3><h3>Heat of formation 形成熱 </h3><h3>Heat sink 散熱器、熱沉 </h3><h3>Heavy/light hole band 重/輕 空穴帶 </h3><h3>Heavy saturation 重摻雜 </h3><h3>Hell - effect 霍爾效應 </h3><h3>Heterojunction 異質結 </h3><h3>Heterojunction structure 異質結結構 </h3><h3>Heterojunction Bipolar Transistor（HBT）異質結雙極型晶體 </h3><h3>High field property 高場特性 </h3><h3>High-performance MOS.( H-MOS)高性能</h3><h3>MOS. Hormalized 歸一化 </h3><h3>Horizontal epitaxial reactor 臥式外延反應器 </h3><h3>Hot carrior 熱載流子 </h3><h3>Hybrid integration 混合集成 </h3><h3><br></h3> <h3>I</h3><h3><br></h3><h3>Image - force 鏡象力 </h3><h3>Impact ionization 碰撞電離 </h3><h3>Impedance 阻抗 </h3><h3>Imperfect structure 不完整結構 </h3><h3>Implantation dose 注入劑量 </h3><h3>Implanted ion 注入離子 </h3><h3>Impurity 雜質</h3><h3>Impurity scattering 雜志散射 </h3><h3>Incremental resistance 電阻增量（微分電阻）</h3><h3>In-contact mask 接觸式掩模 </h3><h3>Indium tin oxide (ITO) 銦錫氧化物 </h3><h3>Induced channel 感應溝道 </h3><h3>Infrared 紅外的 </h3><h3>Injection 注入 </h3><h3> offset voltage 輸入失調電壓 </h3><h3>Insulator 絕緣體 </h3><h3>Insulated Gate FET(IGFET)絕緣柵</h3><h3>FET Integrated injection logic集成注入邏輯 </h3><h3>Integration 集成、積分 </h3><h3>Interconnection 互連 </h3><h3>Interconnection time delay 互連延時 </h3><h3>Interdigitated structure 交互式結構 </h3><h3>Interface 界面 </h3><h3>Interference 干涉 </h3><h3>International system of unions國際單位制 </h3><h3>Internally scattering 谷間散射 </h3><h3>Interpolation 內插法 </h3><h3>Intrinsic 本征的 </h3><h3>Intrinsic semiconductor 本征半導體 </h3><h3>Inverse operation 反向工作 </h3><h3>Inversion 反型 </h3><h3>Inverter 倒相器 </h3><h3>Ion 離子</h3><h3>Ion beam 離子束 </h3><h3>Ion etching 離子刻蝕 </h3><h3>Ion implantation 離子注入 </h3><h3>Ionization 電離 </h3><h3>Ionization energy 電離能 </h3><h3>Irradiation 輻照 </h3><h3>Isolation land 隔離島 </h3><h3>Isotropic 各向同性 </h3><h3><br></h3><h3>J</h3><h3><br></h3><h3>Junction FET(JFET) 結型場效應管 </h3><h3>Junction isolation 結隔離 </h3><h3>Junction spacing 結間距 </h3><h3>Junction side-wall 結側壁 </h3><h3><br></h3><h3>L</h3><h3><br></h3><h3>Latch up 閉鎖 </h3><h3>Lateral 橫向的 </h3><h3>Lattice 晶格 </h3><h3>Layout 版圖 </h3><h3>Lattice binding/cell/constant/defect/distortion 晶格結合力/晶胞/晶格/晶格常熟 </h3><h3>/晶格缺陷/晶格畸變 </h3><h3>Leakage current （泄）漏電流 </h3><h3>Level shifting 電平移動 </h3><h3>Life time 壽命 </h3><h3>linearity 線性度 </h3><h3>Linked bond 共價鍵 </h3><h3>Liquid Nitrogen 液氮 </h3><h3>Liquid－phase epitaxial growth technique 液相外延生長技術 </h3><h3>Lithography 光刻 </h3><h3>Light Emitting Diode(LED) 發(fā)光二極管 </h3><h3>Load line or Variable 負載線 </h3><h3>Locating and Wiring 布局布線 </h3><h3>Longitudinal 縱向的 </h3><h3>Logic swing 邏輯擺幅 </h3><h3>Lorentz 洛淪茲 </h3><h3>Lumped model 集總模型 </h3> <h3>M</h3><h3><br></h3><h3>Majority carrier 多數(shù)載流子 </h3><h3>Mask 掩膜板，光刻板 </h3><h3>Mask level 掩模序號 </h3><h3>Mask set 掩模組 </h3><h3>Mass - action law質量守恒定律</h3><h3>Master-slave D flip-flop主從D觸發(fā)器 </h3><h3>Matching 匹配 </h3><h3>Maxwell 麥克斯韋 </h3><h3>Mean free path 平均自由程 </h3><h3>Meandered emitter junction梳狀發(fā)射極結 </h3><h3>Mean time before failure (MTBF) 平均工作時間 </h3><h3>Megeto - resistance 磁阻 </h3><h3>Mesa 臺面 </h3><h3>MESFET-Metal Semiconductor金屬半導體FET </h3><h3>Metallization 金屬化 </h3><h3>Microelectronic technique 微電子技術 </h3><h3>Microelectronics 微電子學 </h3><h3>Millen indices 密勒指數(shù) </h3><h3>Minority carrier 少數(shù)載流子 </h3><h3>Misfit 失配 </h3><h3>Mismatching 失配 </h3><h3>Mobile ions 可動離子 </h3><h3>Mobility 遷移率 </h3><h3>Module 模塊 </h3><h3>Modulate 調制 </h3><h3>Molecular crystal分子晶體 </h3><h3>Monolithic IC 單片IC MOSFET金屬氧化物半導體場效應晶體管 </h3><h3>Mos. Transistor(MOST )MOS. 晶體管 </h3><h3>Multiplication 倍增 </h3><h3>Modulator 調制 </h3><h3>Multi-chip IC 多芯片IC </h3><h3>Multi-chip module(MCM) 多芯片模塊 </h3><h3>Multiplication coefficient倍增因子 </h3><h3><br></h3><h3>N</h3><h3><br></h3><h3>Naked chip 未封裝的芯片（裸片） </h3><h3>Negative feedback 負反饋 </h3><h3>Negative resistance 負阻 </h3><h3>Nesting 套刻 </h3><h3>Negative-temperature-coefficient 負溫度系數(shù) </h3><h3>Noise margin 噪聲容限 </h3><h3>Nonequilibrium 非平衡 </h3><h3>Nonrolatile 非揮發(fā)（易失）性 </h3><h3>Normally off/on 常閉/開 </h3><h3>Numerical analysis 數(shù)值分析 </h3> <h3>O<br></h3><h3><br></h3><h3>Occupied band 滿帶 </h3><h3>Officienay 功率 </h3><h3>Offset 偏移、失調 </h3><h3>On standby 待命狀態(tài) </h3><h3>Ohmic contact 歐姆接觸 </h3><h3>Open circuit 開路 </h3><h3>Operating point 工作點 </h3><h3>Operating bias 工作偏置 </h3><h3>Operational amplifier (OPAMP)運算放大器 </h3><h3>Optical photon =photon 光子 </h3><h3>Optical quenching光猝滅 </h3><h3>Optical transition 光躍遷 </h3><h3>Optical-coupled isolator光耦合隔離器 </h3><h3>Organic semiconductor有機半導體 </h3><h3>Orientation 晶向、定向 </h3><h3>Outline 外形 </h3><h3>Out-of-contact mask非接觸式掩模 </h3><h3>Output characteristic 輸出特性 </h3><h3>Output voltage swing 輸出電壓擺幅 </h3><h3>Overcompensation 過補償 </h3><h3>Over-current protection 過流保護 </h3><h3>Over shoot 過沖 </h3><h3>Over-voltage protection 過壓保護 </h3><h3>Overlap 交迭 </h3><h3>Overload 過載 </h3><h3>Oscillator 振蕩器 </h3><h3>Oxide 氧化物 </h3><h3>Oxidation 氧化 </h3><h3>Oxide passivation 氧化層鈍化 </h3><h3><br></h3><h3>P</h3><h3><br></h3><h3>Package 封裝</h3><h3>Pad 壓焊點 </h3><h3>Parameter 參數(shù) </h3><h3>Parasitic effect 寄生效應 </h3><h3>Parasitic oscillation 寄生振蕩 </h3><h3>Passination 鈍化 </h3><h3>Passive component 無源元件 </h3><h3>Passive device 無源器件 </h3><h3>Passive surface 鈍化界面 </h3><h3>Parasitic transistor 寄生晶體管 </h3><h3>Peak-point voltage 峰點電壓 </h3><h3>Peak voltage 峰值電壓 </h3><h3>Permanent-storage circuit 永久存儲電路 </h3><h3>Period 周期 </h3><h3>Periodic table 周期表 </h3><h3>Permeable - base 可滲透基區(qū) </h3><h3>Phase-lock loop 鎖相環(huán)</h3><h3>Phase drift 相移 </h3><h3>Phonon spectra 聲子譜 </h3><h3>Photo conduction 光電導</h3><h3> Photo diode 光電二極管 </h3><h3>Photoelectric cell 光電池 </h3><h3>Photoelectric effect 光電效應 </h3><h3>Photoenic devices 光子器件 </h3><h3>Photolithographic process 光刻工藝 </h3><h3>(photo) resist （光敏）抗腐蝕劑 </h3><h3>Pin 管腳 </h3><h3>Pinch off 夾斷 </h3><h3>Pinning of Fermi level 費米能級的釘扎（效應） </h3><h3>Planar process 平面工藝 </h3><h3>Planar transistor 平面晶體管 </h3><h3>Plasma 等離子體 </h3><h3>Plezoelectric effect 壓電效應 </h3><h3>Poisson equation 泊松方程 </h3><h3>Point contact 點接觸 </h3><h3>Polarity 極性 </h3><h3>Polycrystal 多晶 </h3><h3>Polymer semiconductor聚合物半導體 </h3><h3>Poly-silicon 多晶硅 </h3><h3>Potential (電)勢 </h3><h3>Potential barrier 勢壘 </h3><h3>Potential well 勢阱 </h3><h3>Power dissipation 功耗 </h3><h3>Power transistor 功率晶體管 </h3><h3>Preamplifier 前置放大器 </h3><h3>Primary flat 主平面 </h3><h3>Principal axes 主軸 </h3><h3>Print-circuit board(PCB) 印制電路板 </h3><h3>Probability 幾率 </h3><h3>Probe 探針 </h3><h3>Process 工藝 </h3><h3>Propagation delay 傳輸延時 </h3><h3>Pseudopotential method 膺勢發(fā) </h3><h3>Punch through 穿通 </h3><h3>Pulse triggering/modulating 脈沖觸發(fā)/調制Pulse </h3><h3>Widen Modulator(PWM) 脈沖寬度調制 </h3><h3>Punchthrough 穿通 </h3><h3>Push-pull stage 推挽級 </h3><h3><br></h3><h3>Q</h3><h3><br></h3><h3>Quality factor 品質因子 </h3><h3>Quantization 量子化 </h3><h3>Quantum 量子 </h3><h3>Quantum efficiency量子效應 </h3><h3>Quantum mechanics 量子力學 </h3><h3>Quasi Fermi－level準費米能級 </h3><h3>Quartz 石英 </h3><h3><br></h3><h3>R</h3> <h3>R</h3><h3><br></h3><h3>Radiation conductivity 輻射電導率 </h3><h3>Radiation damage 輻射損傷 </h3><h3>Radiation flux density 輻射通量密度 </h3><h3>Radiation hardening 輻射加固 </h3><h3>Radiation protection 輻射保護 </h3><h3>Radiative - recombination輻照復合 </h3><h3>Radioactive 放射性 </h3><h3>Reach through 穿通 </h3><h3>Reactive sputtering source 反應濺射源 </h3><h3>Read diode 里德二極管 </h3><h3>Recombination 復合 </h3><h3>Recovery diode 恢復二極管 </h3><h3>Reciprocal lattice 倒核子 </h3><h3>Recovery time 恢復時間 </h3><h3>Rectifier 整流器（管） </h3><h3>Rectifying contact 整流接觸 </h3><h3>Reference 基準點 基準 參考點 </h3><h3>Refractive index 折射率 </h3><h3>Register 寄存器 </h3><h3>Registration 對準 </h3><h3>Regulate 控制 調整 </h3><h3>Relaxation lifetime 馳豫時間 </h3><h3>Reliability 可靠性 </h3><h3>Resonance 諧振 </h3><h3>Resistance 電阻 </h3><h3>Resistor 電阻器 </h3><h3>Resistivity 電阻率 </h3><h3>Regulator 穩(wěn)壓管（器） </h3><h3>Relaxation 馳豫 </h3><h3>Resonant frequency共射頻率 </h3><h3>Response time 響應時間 </h3><h3>Reverse 反向的 </h3><h3>Reverse bias 反向偏置 </h3><h3><br></h3><h3>S</h3><h3><br></h3><h3>Sampling circuit 取樣電路 </h3><h3>Sapphire 藍寶石（Al2O3） </h3><h3>Satellite valley 衛(wèi)星谷 </h3><h3>Saturated current range電流飽和區(qū) </h3><h3>Saturation region 飽和區(qū)</h3><h3>Saturation 飽和的 </h3><h3>Scaled down 按比例縮小 </h3><h3>Scattering 散射 </h3><h3>Schockley diode 肖克萊二極管 </h3><h3>Schottky 肖特基 </h3><h3>Schottky barrier 肖特基勢壘 </h3><h3>Schottky contact 肖特基接觸 </h3><h3>Schrodingen 薛定厄 </h3><h3>Scribing grid 劃片格 </h3><h3>Secondary flat 次平面 </h3><h3>Seed crystal 籽晶 </h3><h3>Segregation 分凝 </h3><h3>Selectivity 選擇性 </h3><h3>Self aligned 自對準的 </h3><h3>Self diffusion 自擴散 </h3><h3>Semiconductor 半導體 </h3><h3>Semiconductor-controlled rectifier 可控硅 </h3><h3>Sendsitivity 靈敏度 </h3><h3>Serial 串行/串聯(lián) </h3><h3>Series inductance 串聯(lián)電感 </h3><h3>Settle time 建立時間 </h3><h3>Sheet resistance 薄層電阻 </h3><h3>Shield 屏蔽</h3><h3>Short circuit 短路 </h3><h3>Shot noise 散粒噪聲</h3><h3>Shunt 分流 </h3><h3>Sidewall capacitance </h3><h3>邊墻電容 Signal 信號 </h3><h3>Silica glass 石英玻璃 </h3><h3>Silicon 硅 </h3><h3>Silicon carbide 碳化硅 </h3><h3>Silicon dioxide (SiO2) 二氧化硅 </h3><h3>Silicon Nitride(Si3N4) 氮化硅 </h3><h3>Silicon On Insulator 絕緣硅 </h3><h3>Siliver whiskers 銀須 </h3><h3>Simple cubic 簡立方 </h3><h3>Single crystal 單晶 </h3><h3>Sink 沉 </h3><h3>Skin effect 趨膚效應 </h3><h3>Snap time 急變時間 </h3><h3>Sneak path 潛行通路 </h3><h3>Sulethreshold 亞閾的 </h3><h3>Solar battery/cell 太陽能電池 </h3><h3>Solid circuit 固體電路 </h3><h3>Solid Solubility 固溶度 </h3><h3>Sonband 子帶 </h3><h3>Source 源極 </h3><h3>Source follower 源隨器 </h3><h3>Space charge 空間電荷 </h3><h3>Specific heat(PT) 熱 </h3><h3>Speed-power product 速度功耗乘積 Spherical 球面的 </h3><h3>Spin 自旋 Split 分裂 </h3><h3>Spontaneous emission 自發(fā)發(fā)射 </h3><h3>Spreading resistance擴展電阻 </h3><h3>Sputter 濺射 Stacking fault 層錯 </h3><h3>Static characteristic 靜態(tài)特性 </h3><h3>Stimulated emission 受激發(fā)射 </h3><h3>Stimulated recombination 受激復合 </h3><h3>Storage time 存儲時間 </h3><h3>Stress 應力 </h3><h3>Straggle 偏差 </h3><h3>Sublimation 升華 </h3><h3>Substrate 襯底 </h3><h3>Substitutional 替位式的 </h3><h3>Superlattice 超晶格 </h3><h3>Supply 電源 Surface 表面 </h3><h3>Surge capacity 浪涌能力 </h3><h3>Sub 下標 </h3><h3>Switching time 開關時間 </h3><h3>Switch 開關 </h3><h3><br></h3><h3>T</h3><h3><br></h3><h3>Tailing 擴展 </h3><h3>Terminal 終端 </h3><h3>Tensor 張量 Tensorial 張量的 </h3><h3>Thermal activation 熱激發(fā) </h3><h3>Thermal conductivity 熱導率 </h3><h3>Thermal equilibrium 熱平衡 </h3><h3>Thermal Oxidation 熱氧化 </h3><h3>Thermal resistance 熱阻 </h3><h3>Thermal sink 熱沉 </h3><h3>Thermal velocity 熱運動 </h3><h3>Thermoelectricpovoer 溫差電動勢率 </h3><h3>Thick-film technique 厚膜技術 </h3><h3>Thin-film hybrid IC薄膜混合集成電路 </h3><h3>Thin-Film Transistor(TFT) 薄膜晶體 </h3><h3>Threshlod 閾值 </h3><h3>Thyistor 晶閘管 </h3><h3>Transconductance 跨導 </h3><h3>Transfer characteristic 轉移特性 </h3><h3>Transfer electron 轉移電子 </h3><h3>Transfer function 傳輸函數(shù) Transient 瞬態(tài)的 </h3><h3>Transistor aging(stress) 晶體管老化 </h3><h3>Transit time 渡越時間 </h3><h3>Transition 躍遷 </h3><h3>Transition-metal silica 過度金屬硅化物 </h3><h3>Transition probability 躍遷幾率 </h3><h3>Transition region 過渡區(qū) </h3><h3>Transport 輸運 Transverse 橫向的 </h3><h3>Trap 陷阱 Trapping 俘獲 </h3><h3>Trapped charge 陷阱電荷 </h3><h3>Triangle generator 三角波發(fā)生器 </h3><h3>Triboelectricity 摩擦電</h3><h3> Trigger 觸發(fā) </h3><h3>Trim 調配 調整 </h3><h3>Triple diffusion 三重擴散 </h3><h3>Truth table 真值表 </h3><h3>Tolerahce 容差 </h3><h3>Tunnel(ing) 隧道（穿） </h3><h3>Tunnel current 隧道電流 </h3><h3>Turn over 轉折 </h3><h3>Turn - off time 關斷時間 </h3><h3><br></h3><h3>U</h3><h3><br></h3><h3>Ultraviolet 紫外的 </h3><h3>Unijunction 單結的 </h3><h3>Unipolar 單極的 </h3><h3>Unit cell 原（元）胞 </h3><h3>Unity-gain frequency 單位增益頻率 </h3><h3>Unilateral-switch單向開關 </h3><h3><br></h3><h3>V</h3><h3><br></h3><h3>Vacancy 空位 Vacuum 真空 </h3><h3>Valence(value) band 價帶 Value band edge 價帶頂 </h3><h3>Valence bond 價鍵 Vapour phase 汽相 </h3><h3>Varactor 變容管 Varistor 變阻器 </h3><h3>Vibration 振動 Voltage 電壓 </h3><h3><br></h3><h3>W</h3><h3><br></h3><h3>Wafer 晶片 </h3><h3>Wave equation 波動方程 </h3><h3>Wave guide 波導 </h3><h3>Wave number 波數(shù) </h3><h3>Wave-particle duality 波粒二相性 </h3><h3>Wear-out 燒毀 </h3><h3>Wire routing 布線 </h3><h3>Work function 功函數(shù) </h3><h3>Worst-case device 最壞情況器件 </h3> <h3>Y<br></h3><h3><br></h3><h3>Yield 成品率 </h3><h3><br></h3><h3>Z</h3><h3><br></h3><h3>Zener breakdown 齊納擊穿 </h3><h3>Zone melting 區(qū)熔法</h3>